EDC Unit - V Important Questions

Explain the construction & operation of a N-channel MOSFET in enhancement and depletion modes with the help of static drain characteristics and transfer characteristics?
1. Define r_d, g_m, and of JFET.
2. 1. Analyze CS amplifier with Fixed bias and find the operating point.
  2. Find Z_i, Z_o, A_v for fixed bias circuit R_G = 1M, R_D = 5.1K, V_DD = 10V, V_GS = -1.5V, g_m = 2ms.
1. Explain the operation of common drain amplifier with neat sketches and derive the equations for Z_i , Z_o and A_v.
2. Write the differences between BJT and FET.
3. Explain why FET is called voltage controlled device.
1. Explain channel length modulation in FETs.
2. Explain the construction and operation of n-channel JFET with its drain and transfer characteristics.
1. The p-channel JFET has a I_DSS = -12mA, V_P = 5V and V_GS = 1.6V. Calculate I_D, g_m and g_m0.
2. Analyze CS amplifier with Voltage divider bias and find the operating point.
1. Draw the JFET small signal model.
2. Draw the symbols of FET (JFET and MOSFET types).
3. For n-channel silicon FET with a = 3 x 10^-4 cm and N_D = 10¹⁵ electrons/cm³ find pinch off voltage.
1. Draw A.C equivalent model for JFET Common source amplifier with self bias (bypassed R_s) and find Z_i, Z_o and A_v.
2. Find Z_i, Z_o and Av of JFET Common source amplifier with fixed bias with R_G = 1M, V_GG = -1.5V ,R_D = 5.1K, g_m = 2ms and r_d = 50K.