EDC Unit - V Important Questions
- Explain the construction & operation of a N-channel MOSFET in enhancement and depletion modes with the help of static drain characteristics and transfer characteristics?
-
- Define rd, gm, and of JFET.
-
- Analyze CS amplifier with Fixed bias and find the operating point.
- Find Zi, Zo, Av for fixed bias circuit RG = 1M, RD = 5.1K, VDD = 10V, VGS = -1.5V, gm = 2ms.
-
- Explain the operation of common drain amplifier with neat sketches and derive the equations for Zi , Zo and Av.
- Write the differences between BJT and FET.
- Explain why FET is called voltage controlled device.
-
- Explain channel length modulation in FETs.
- Explain the construction and operation of n-channel JFET with its drain and transfer characteristics.
-
- The p-channel JFET has a IDSS = -12mA, VP = 5V and VGS = 1.6V. Calculate ID, gm and gm0.
- Analyze CS amplifier with Voltage divider bias and find the operating point.
-
- Draw the JFET small signal model.
- Draw the symbols of FET (JFET and MOSFET types).
- For n-channel silicon FET with a = 3 x 10-4 cm and ND = 1015 electrons/cm3 find pinch off voltage.
-
- Draw A.C equivalent model for JFET Common source amplifier with self bias (bypassed Rs) and find Zi, Zo and Av.
- Find Zi, Zo and Av of JFET Common source amplifier with fixed bias with RG = 1M, VGG = -1.5V ,RD = 5.1K, gm = 2ms and rd = 50K.
-
UpdatedOct 14, 2015
-
Views3,395