Elements of Electrical and Electronics Engineering Mid - II, November - 2014

1.Which of the following is pentavalent element?
  • antimony
  • indium
  • boron
  • gallium
Answer: A
2.Flow of charge carriers due to concentration gradient results in a process called a
  • recombination
  • drift
  • diffusion
  • none
Answer: C
3.Storage capacitance is another name for
  • transition capacitance
  • diffusion capacitance
  • junction capacitance
  • reverse capacitance
Answer: B
4.Zener breakdown occurs in which of the following junction?
  • lightly doped
  • heavily doped
  • moderately doped
  • all of the above
Answer: B
5.Efficiency of the fullwave rectifier is ______________
  • 81.2%
  • 40.6%
  • 76%
  • 100%
Answer: A
6.Which of the following is a bipolar device
  • MOSFET
  • BJT
  • JFET
  • NONE
Answer: B
7.Which of the following regions of BJT is lightly doped
  • emitter
  • base
  • collecter
  • none
Answer: A
8.Which of the following regions of BJT is widest in area
  • emitter
  • base
  • collecter
  • none
Answer: A
9.A conducting BJT dissipates least power when operating in the _____________________
  • saturation
  • cutoff
  • active
  • revese active
Answer: B
10.Stability factor is approximately unity for _______________
  • collector to base bias
  • fixed bias
  • self bias
  • none of the above
Answer: C
11.Reverse saturation current increases at the rate of _______ per degree centigrade.
Answer: 7
12.The capacitance that offered by a junction diode during its forward bias is called ___________.
Answer: Varactor diode
13.Avalanche B.D IS caused by a process called as ___________________.
Answer: Avalanche multiplication
14.The PIV of FWR is _________
Answer: 2Vm
15.The CRT woks as heart of the _________________.
Answer: Cathode ray oscilloscope
16.The locus of operating points is called _______________________
Answer: Quiescent point
17.Filter is a device used to remove _______ content present in the o/p of the a rectifier.
Answer: Unwanted AC component
18.Si transistor have much less _______________ current as compared to Ge diode.
Answer: Leakage current
19.Silicon controlled rectifier is used as ___________________
Answer: Switch
20.In HWR diode conducts for _________________ cycle of the i/p signal
Answer: Only positive half cycle