Electronics Engineering Mid - I, September - 2014

1.Which of the following is trivalent element?
  • Antimony
  • Phosphorous
  • Gallium
  • Arsenic
Answer: C
2.Attraction of minority carriers by the electric field developed at the junction is called as
  • Recombination
  • Drift
  • Diffusion
  • None
Answer: B
3.Space charge capacitance is another name for
  • Junction capacitance
  • Reverse capacitance
  • Transition capacitance
  • Diffusion capacitance
Answer: C
4.Avalanche breakdown occurs in which of the following junctions?
  • lightly doped
  • heavily doped
  • moderately doped
  • All the above
Answer: A
5.Efficiency of Half wave rectifier is
  • 100%
  • 40.6%
  • 81.2%
  • None
Answer: B
6.Identify the bipolar device among the following
  • BJT
  • MOSFET
  • JFET
  • All the above
Answer: A
7.Which of the following regions of BJT is heavily doped
  • Emitter
  • Base
  • Collector
  • None
Answer: A
8.Which of the following regions of BJT is narrow in area
  • Emitter
  • Base
  • Collector
  • None
Answer: B
9.The arrow head of a transistor symbol indicates
  • Direction of electron current in the emitter
  • Direction of hole current in the emitter
  • Diffusion current in emitter
  • Drift current in emitter
Answer: A
10.The quiescent point of a transistor biasing circuit implies
  • Zero bias
  • No output
  • No distorsion
  • No input signal
Answer: C
11.The reverse saturation current doubles for every----------------------- rise in temperature.
Answer: 10°C
12.The capacitance that offered by a junction diode during its reverse bias is called----------------------
Answer: Transition capacitance
13.Zener breakdown is caused by a process called as-----------------------------
Answer: Field ionization
14.Center-tapped transformer is used in------------------------rectifier.
Answer: Full wave
15.Applying external voltage to semiconductor device is called-----------------------.
Answer: Biasing
16.The device that is used to eliminate ripple present in the output of a rectifier is called------------------
Answer: Filter
17.Collector region is made physically larger than emitter region to facilitate--------------------------
Answer: Power dissipation
18.----------------------biasing technique gives good stability
Answer: Self bias
19.The depletion region in a PN diode is formed due to ---------------------charge carriers.
Answer: Void of free carriers/lack of free carriers
20.In full wave rectifier each diode conducts for-------------------cycle of input.
Answer: Half cycle