Basic Electronics Mid - I, September - 2014

1.The relation between IE, IB & IC In BJTis _______________
  • IC = IE + IB
  • IC = IE - IB
  • IE = IC + IB
  • IE = IC + IB
Answer: C
2.Which of the following is a characteristic of CE amplifier ?
  • large current gain
  • large voltage gain
  • large power gain
  • All the above
Answer: D
3.Thyristor is a _______ terminal device.
  • 1
  • 2
  • 3
  • 4
Answer: C
4.SCR acts as ____ when it is forward bias.
  • switch
  • voltage source
  • current source
  • transistor
Answer: A
5.In an SCR half wave rectifier, the sinusoidal voltage of 220V peak is applied and the firing angle is 30. The average output voltage is _____ volts.
  • 6.537
  • 7.26
  • 72.6
  • 65.3
Answer: D
6.The maximum reverse voltage that can be applied to the PN junction is called
  • forward current
  • peak inverse voltage
  • maximum power rating
  • maximum voltage
Answer: B
7.The application of PN diode is in rectifiers
  • switch in logic circuits
  • clipping network
  • All the above
Answer: D
8.The forward bias diode ideally acts as
  • short circuit
  • open circuit
  • voltage source
  • current source
Answer: A
9.The input resistance is high for which of the following configurations
  • CB
  • CC
  • CC
  • All the above
Answer: A
10.The configuration that is used for audio frequency circuits is
  • CB
  • CE
  • CC
  • All the above
Answer: B
11.In a CE amplifier, the voltage phase shift is _______ .
Answer: 180
12.In ______ configuration of the amplifier, power gain is equal to the voltage gain.
Answer: CB
13.The h parameters of the transistor are hfe = 60, hie= 500Ω at Ic = 3mA. The input impedance of CE amplifier is _______.
Answer: 500Ω
14.____________ is a device to be constituted by two transistors connected back to back.
Answer: Thyristor
15.In a SCR full-wave rectifier, the average output voltage is given by ________________.
Answer: Vm/π(1+cosα)
16.When positive terminal of the battery is connected to the P-type and negative terminal of the N-type of the PN junction diode, the bias is known as ___________ .
Answer: Forward
17.When a reverse bias is applied to a germanium PN junction diode, the reverse saturation current is 0.3μA. The current flowing in the diode when 0.15V forward bias is applied is ______.
Answer: 120.73μA
18.In the CE transistor circuit the relation among Ic, Ib, Iceo is _________________________ .
Answer: Ic = βIb + Iceo
19.In a CE configuration the curves relating between Vbe and Ib represent ____________ characteristic.
Answer: Input
20.In a CE configuration, the region below the curve for Ib=0 is called as ____________.
Answer: Cut-off