Basic Electrical and Electronics Engineering Mid - II, November - 2014
1.The majority carriers in N-type semiconductors are
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Holes
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Electrons
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Neutrons
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Protons
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Answer: B
2.In a full wave rectifier the diode conducts for
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one half cycle
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full cycle
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alternate half cycle
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None of the above
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Answer: C
3.A transistor is a combination of two p-n junctions with their
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p-region connected together
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n-region connected together
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n-region connected to other p-region
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Both a and b
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Answer: D
4.The common emitter transistor circuit has
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high gain
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low gain
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negligible gain
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zero gain
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Answer: A
5.Any logic gate can be built using
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NOR gates
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OR gate
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AND gate
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All of these
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Answer: A
6.FET is a ___________controlled device
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Current
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Voltage
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Power
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Frequency
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Answer: B
7.The number of p-n junctions in an SCR is/are
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1
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2
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3
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4
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Answer: C
8.Which of the following addition is incorrect?
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1001+1101=10110
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10101+10011=101000
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11111+11111=100000
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11111+10001=110000
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Answer: C
9.A single binary digit is called _________
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byte
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bit
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data
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logic
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Answer: B
10.The output of a J-K flip flop toggles when
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J = 1, K = 0
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J = 0, K = 1
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J = 1, K = 1
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J = 0, K = 0
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Answer: C
11.The forbidden energy gap for germanium is _____________
Answer: 0.7V
12.The donor type of impurity is ________________
Answer: Phosphorus
13._____________ Gate can be used as inverter.
Answer: NOR (or) NOT
14.The decimal number 29 in binary form is __________________
Answer: 11101
15.A byte is a group of ___________
Answer: 8 bits
16.The forward resistance of a diode will be ________
Answer: Small
17.When a high reverse voltage is applied to a p-n junction __________breakdown occurs.
Answer: Zener
18.In Boolean algebra the word literal means _________________
Answer: Variable
19.The output of an XOR gate is high only when __________________.
Answer: Two inputs are unequal
20.In a thyristor the ratio of latching to holding current is ________________
Answer: 2.5